Bakgrunn og aktiviteter
Dimosthenis Peftitsis was born in Kavala, Greece, in 1985. He received the Diploma degree (Hons.) in electrical and computer engineering from the Democritus University of Thrace, Xanthi, Greece, in 2008 and the Ph.D. degree from the KTH Royal Institute of Technology, Stockholm, Sweden, in 2013. In 2008, he was with the ABB Corporate Research, Västerås, Sweden, for six months, where he was involved in the diploma thesis. From 2013 to 2014, he was a Postdoctoral Researcher involved in the research on SiC converters at the Department of Electrical Energy Conversion, KTH Royal Institute of Technology. From 2014-2016, he was working as a Postdoctoral Fellow at the Lab for High Power Electronics Systems, ETH Zurich, where he was involved in dc-breakers for multiterminal HVDC systems. In May 2016, he joined the Norwegian University of Science and Technology in Trondheim, Norway, as an Associate Professor of power electronics at the Department of Electrical Power Engineering. His current research interests are in the area of WBG (e.g. SiC, GaN) power converters design, gate and base driver designs for WBG devices, as well as dc-breaker concepts for MV and HVDC systems. Prof. Peftitsis is Senior Member of IEEE and a member of the EPE International Scientific Committee.
Vitenskapelig, faglig og kunstnerisk arbeid
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- (2016) Unidirectional hybrid circuit breaker topologies for multi-line nodes in HVDC grids. Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference.
- (2016) Design Considerations and Performance Evaluation of Hybrid DC Circuit Breakers for HVDC Grids. Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference.
- (2016) Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview. IEEE transactions on power electronics. vol. 31 (10).
- (2016) Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors. IEEE transactions on industrial electronics (1982. Print). vol. 63 (4).
- (2016) On the Design Process of a 6-kVA Quasi-Z-inverter Employing SiC Power Devices. IEEE transactions on power electronics. vol. 31 (11).